process
 
Process Capability
 
Category
Description
Unit
Inari
Wafer sort
Wafer backlap - Si wafer
Yes
-Max wafer size
in
8
-Min thickness
um
125
- Thickness accuracy
um
12.5
Wafer DC probe
Yes
Wafer RF probe
Yes
Auto wafer visual and reject capture into
wafer map (inkless wafer map)
Yes
Manual wafer visual and inking
Yes
Wafer saw - Si wafer
Yes
Wafer saw - GaAs wafer
No
Wafer scribe and break
Yes
Wafer laser cut
No
Die level tape and reel (for die sell)
Yes
SMT
Smallest SMT component
01005
Die level SMT (gold pad)
Yes
Smallest 01005 pad
um
175x225
DA
Thinnest die (Si and GaAs)
mil
4
Smallest die size
mil
7.3x7.3
Medium thermal epoxy (3-10W/mK)
1295SA
Low thermal epoxy (<3W/mK)
84-1LMIS
Eutectic DA capability
No
Biggest die aspect ratio for GaAs die with 4-
5mil thickness
2:1
Post DA, auto chip coating
No
Stack die capability
Yes
Flip chip capability
Yes
WB
Gold wire size
mil
1.0
Al pad bonding capability
Yes
Die to die bonding capability
Yes
Gold ball bond, min bond pad opening for
1mil wire
um
60 x 60
Gold ball bond, min wire loop for 1.0mil wire
um
100(Std. Bond)
60(RSSB)
Minimum bond pad pitch for 1.0mil wire
um
75(Bond pad on
die)
75(Bond pad on
PCB)
Gold ball bond, min bond pad opening for
0.8mil wire
um
NA
Gold ball bond, min wire loop for 0.8mil wire
um
NA
Minimum bond pad pitch for 0.8mil wire
um
NA
Mold
Available mold cap height
mm
0.5 and 0.6
Ultra low stress compound - for product with
high internal stress
Yes
Mold mc with void vacuum (qty) / total mold
mc qty
Yes
Mold mc with panel vacuum(qty) / total
mold mc qty
Yes
Saw
Package saw accuracy
um
50
Smallest package
mm
1.6 x 2.0
Test
RF Test capability
Yes
Reliability
IR
Yes
UBPP
Yes
FA
X-Section / Backlap
Yes
X-Ray
Yes
T/C - Scan
Yes